Samsung Electronics Co., Ltd., the world loss leader in advanced semiconductor unit engineering solutions, today announced the industry’s first base multi-splintering parcel (MCP) with PRAM – for manipulation in mobile handsets commencement later this quarter.
The 512 megabit Samsung PRAM in the MCP is backward compatible with 40 nanometre-class* NOR flash lamp storage in both its computer hardware and software functionality, allowing mobile French telephone designers the gismo of having multi-chip packaging fully compatible with past tense stand-alone PRAM chip technology. PRAM is expected to be widely embraced by next class as the successor to NOR flash in consumer electronics designs, to become a major memory technology.
“Memories for portable consumer devices today ar at a major turning point as mobile applications increasingly require more diverse storage technologies,” said Dong-soo Jun, executive vice prexy, Memory Sales and Marketing, Samsung Electronics. “The launch of our PRAM in an advanced MCP solution for the replacement of 40nm-course of study and finer geometry NOR meets this motive head-on. Our PRAM MCP volition not only enable handset designers to utilize conventional platforms, but expedite the first appearance of LPDDR2 DRAM and next-propagation PRAM engineering as the leading-margin basis for high gear-performance solutions,” he added.
PRAM, which stores information via the phase change characteristics of its base cloth, an alloy of Ge, antimony and Ti, provides trinity-multiplication faster information reposition carrying out per word than NOR chips. This new PRAM-packaged storage combines the nonvolatile nature of flash storage with the high gear-speed capability of DRAM. Its simple cell structure makes design MCP chips for handsets a faster and easier process, with the imminent use of 30nm-class and finer procedure guest engineering to overcome long-time designing difficulties inherent in NOR flash engineering.
As a replacing for NOR, PRAM tin can more easily accommodate the maturation demand for high gear-speed, high gear-density nonvolatile storage in mobile phones and other mobile applications such as MP3 players, personal multimedia system players and navigational devices.
Samsung is continuing its research and exploitation into PRAM and other advanced memory chips to enable faster ‘write’ capabilities, a key feature in pickings photograph images, providing multimedia system electronic messaging and transcription video clips to reduce the understudy metre in information reposition. This high-hurrying write capableness will be important in a diverse straddle of digital storage and consumer devices, such as solidness body politic drives (SSDs) and HDTVs.
